Reconstruction, rumpling, and Dirac states at the (001) surface of a topological crystalline insulator Pb1-xSnxSe

Equilibrium atomic configuration and electronic structure of the (001) surface of IV-VI semiconductors PbTe, PbSe, SnTe and SnSe, is studied using the density functional theory (DFT) methods. At surfaces of all those compounds, the displacements of ions from their perfect lattice sites reveal two features characteristic of the rock salt crystals. First, the ionic displacements occur only along the direction perpendicular to the surface, and they exhibit the rumpling effect, i.e., the vertical shifts of cations and anions differ. Second, the interlayer spacing of the first few monolayers at the surface oscillates. Our results are in good agreement with the previous X-ray experimental data and theoretical results where available. They also are consistent with the presence of two {110} mirror planes at the (001) surface of the rock salt. One the other hand, experiments preformed for the topological Pb$_{1-x}$Sn$_x$ Se alloy indicate breaking of the mirror symmetry due to a large 0.3 {\AA} relative displacement of the cation and anion sublattices at the surface, which induces the opening of the gap of the Dirac cones. Our results for Pb$_{1-x}$Sn$_x$Se including the simulated STM images, are in contradiction with these findings, since surface reconstructions with broken symmetry are never the ground state configurations. The impact of the theoretically determined surface configurations and of the chemical disorder on the surface states is analyzed.Comment: 9 pages, 11 figure

Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

In order to characterize magnetic-field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the cyclotron resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with the THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.Comment: 8 pages, 11 figure

Electrons in a ferromagnetic metal with a domain wall

We present theoretical description of conduction electrons interacting with a domain wall in ferromagnetic metals. The description takes into account interaction between electrons. Within the semiclassical approximation we calculate the spin and charge distributions, particularly their modification by the domain wall. In the same approximation we calculate local transport characteristics, including relaxation times and charge and spin conductivities. It is shown that these parameters are significantly modified near the wall and this modification depends on electron-electron interaction.Comment: 10 pages with 4 figure

Conductance spectra of (Nb, Pb, In)/NbP -- superconductor/Weyl semimetal junctions

The possibility of inducing superconductivity in type-I Weyl semimetal through coupling its surface to a superconductor was investigated. A single crystal of NbP, grown by chemical vapor transport method, was carefully characterized by XRD, EDX, SEM, ARPES techniques and by electron transport measurements. The mobility spectrum of the carriers was determined. For the studies of interface transmission, the (001) surface of the crystal was covered by several hundred nm thick metallic layers of either Pb, or Nb, or In. DC current-voltage characteristics and AC differential conductance through the interfaces as a function of the DC bias were investigated. When the metals become superconducting, all three types of junctions show conductance increase, pointing out the Andreev reflection as a prevalent contribution to the subgap conductance. In the case of Pb-NbP and Nb-NbP junctions, the effect is satisfactorily described by modified Blonder-Tinkham-Klapwijk model. The absolute value of the conductance is much smaller than that for the bulk crystal, indicating that the transmission occurs through only a small part of the contact area. An opposite situation occurs in In-NbP junction, where the conductance at the peak reaches the bulk value indicating that almost whole contact area is transmitting and, additionally, a superconducting proximity phase is formed in the material. We interpret this as a result of indium diffusion into NbP, where the metal atoms penetrate the surface barrier and form very transparent superconductor-Weyl semimetal contact inside. However, further diffusion occurring already at room temperature leads to degradation of the effect, so it is observed only in the pristine structures. Despite of this, our observation directly demonstrates possibility of inducing superconductivity in a type-I Weyl semimetal.Comment: Accepted for Phys. Rev. B. 13 pages, 12 figures. Second version with major revisions. The title was changed. One author R. Jakiela added. New inset to Fig. 8(A). New fits in Fig. 8 (B) and Fig. 10 (B). Added figures 12 (C)-(E). Added Fig. 12 (F) with SIMS data. Rewritten chapters III-C-2 and III-C-3. Reference no. 38 removed, 11 new references: 9, 21, 22, 40-44, 46-49 were adde

Effect of bulk inversion asymmetry on the Datta-Das transistor

A model of the Datta-Das spin field-effect transistor is presented which, in addition to the Rashba interaction, takes into account the influence of bulk inversion asymmetry of zinc-blende semiconductors. In the presence of bulk inversion asymmetry, the conductance is found to depend significantly on the crystallographic orientation of the channel. We determine the channel direction optimal for the observation of the Datta-Das effect in GaAs and InAs-based devices.Comment: 4 pages, Revtex4, 4 EPS figure

Investigation of the ferromagnetic transition in the correlated 4d perovskites SrRu1−x_{1-x}Rhx_xO3_3

The solid-solution SrRu$_{1-x}$Rh$_x$O$_3$ ($0\le x \le1$) is a variable-electron-configuration system forming in the nearly-cubic-perovskite basis, ranging from the ferromagnetic 4$d^4$ to the enhanced paramagnetic 4$d^5$. Polycrystalline single-phase samples were obtained over the whole composition range by a high-pressure-heating technique, followed by measurements of magnetic susceptibility, magnetization, specific heat, thermopower, and electrical resistivity. The ferromagnetic order in long range is gradually suppressed by the Rh substitution and vanishes at $x \sim 0.6$. The electronic term of specific-heat shows unusual behavior near the critical Rh concentration; the feature does not match even qualitatively with what was reported for the related perovskites (Sr,Ca)RuO$_3$. Furthermore, another anomaly in the specific heat was observed at $x \sim 0.9$.Comment: Accepted for publication in PR

Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances, is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.Comment: 22 pages, 12 figures, review pape